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| savantic semiconductor product specification silicon pnp power transistors BUL52B d escription with to-220c package high voltage fast switching high energy rating applications designed for use in electronic ballast applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 800 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 8 a i cm collector current-peak 12 a i b base current 4 a p tot total power dissipation t c =25 100 w t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors BUL52B characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =10ma ;i b =0 400 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 800 v v (br)ebo emitter-base breakdwon voltage i e =1ma ;i c =0 10 v v cesat-1 collector-emitter saturation voltage i c =0.1a ;i b =20ma 0.1 v v cesat-2 collector-emitter saturation voltage i c =1a; i b =0.2a 0.2 v v cesat-3 collector-emitter saturation voltage i c =2a; i b =0.4a 0.3 v v cesat-4 collector-emitter saturation voltage i c =3a; i b =0.6a 0.5 v v besat-1 base-emitter saturation voltage i c =1a; i b =0.2a 1.0 v v besat-2 base-emitter saturation voltage i c =2a ;i b =0.4a 1.1 v v besat-3 base-emitter saturation voltage i c =3a ;i b =0.6a 1.2 v i cbo collector cut-off current v cb =800v; i e =0 t c =125 10 100 a i ceo collector cut-off current v ce =400v; i b =0 100 a i ebo emitter cut-off current v eb =9v; i c =0 t c =125 10 100 a h fe-1 dc current gain i c =0.1a ; v ce =5v 20 h fe-2 dc current gain i c =1a ; v ce =5v 15 45 h fe-3 dc current gain i c =3a ; v ce =1v t c =125 10 5 f t transition frequency i c =0.2a ; v ce =4v 20 mhz c ob output capacitance v cb =20v ;f=1mhz 40 pf savantic semiconductor product specification 3 silicon power transistors BUL52B package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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